Renesas Electronics RJK6014DPK-00#T0 MOSFET

Vgs (Max): 30V

Gate Charge (Qg): 45nC

Power consumption: 150W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 16A

Input Capacitance (Ciss): 1800pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 575mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet