Renesas Electronics RJK6035DPP-A0#T2 MOSFET功率TRS1高压MOS/IGBT

Width: 10 mm

Height: 4.5 mm

Length: 15 mm

Fall Time: 5.3 ns

Rise Time: 4.6 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 65 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 1.37 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V