Renesas Electronics RJP65T43DPM-00#T1 IGBT晶体管 POWER TRS1

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 68.8 W

Gate-Emitter Leakage Current: 1 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 20 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 40 A