Renesas Electronics UPA2738GR-E1-AX MOSFET功率晶体管

Width: 3.95 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 50 ns

Rise Time: 30 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 4 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V