Renesas Electronics UPA2826T1S-E2-AT MOSFET功率晶体管MOS-IC

Width: 3.3 mm

Height: 0.8 mm

Length: 3.3 mm

Fall Time: 120 ns

Rise Time: 94 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 120 ns

Id - Continuous Drain Current: 27 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 25 S

Rds On - Drain-Source Resistance: 4.3 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V