Renesas Electronics UPA3753GR-E1-AX MOSFET功率晶体管MOSFET

Width: 3.95 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 5.1 ns

Rise Time: 3.7 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 13.4 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 850 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8.5 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 2.5 S

Rds On - Drain-Source Resistance: 56 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V