ROHM Semiconductor 2SC3837KT146P 双极型晶体管 NPN 20V 50mA

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 180

Gain Bandwidth Product fT: 1.5 GHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 82

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 500 mV