ROHM Semiconductor 2SCR567F3TR 双极晶体管 120V 2.5A DFN2020 BJT NPN

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 390 at 100 mA, 5 V

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 2.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 100 mA, 5 V

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 200 mV