ROHM Semiconductor 2SD1834T100 达林顿晶体管 DARL NPN 60V 1A

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 2000

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 2000 at 500 mA, 3 V

Maximum Collector Cut-off Current: 1 uA

Collector- Emitter Voltage VCEO Max: 60 V