ROHM Semiconductor 2SD2142KT146 达林顿晶体管 DARL NPN 30V .3A

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 5000

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5000 at 10 mA, 5 V

Maximum Collector Cut-off Current: 100 nA

Collector- Emitter Voltage VCEO Max: 30 V