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Width: 2.5 mm
Height: 1.5 mm
Length: 4.5 mm
Technology: Si
Unit Weight: 130.500 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 180 at 100 mA, 5 V
Gain Bandwidth Product fT: 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: 1.5 A
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 180
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 2 V
