ROHM Semiconductor BCX71HT216 双极型晶体管 BJTs - 双极晶体管

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 310

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Continuous Collector Current: - 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 140

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 250 mV