ROHM Semiconductor BSM120D12P2C005 SiC功率模块 型号：1200V 120A（带二极管）

Width: 45.6 mm

Height: 21.1 mm

Length: 122 mm

Fall Time: 60 ns

Rise Time: 50 ns

Technology: SiC

Unit Weight: 279.413 g

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 935 W

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 170 ns

Id - Continuous Drain Current: 134 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.3 V