ROHM Semiconductor BSM180C12P2E202 SiC功率模块 1200V Vdss; 204A ID SiC模块; SICSTD02

Width: 62 mm

Height: 15.4 mm

Length: 152 mm

Fall Time: 32 ns

Rise Time: 36 ns

Technology: SiC

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.6 V at 180 A

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 1.36 kW

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 49 ns

Typical Turn-Off Delay Time: 139 ns

Id - Continuous Drain Current: 204 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.6 V