ROHM Semiconductor BSM180D12P2C101 SiC功率模块 型号：1200V 180A（无二极管）

Width: 45.6 mm

Height: 21.1 mm

Length: 122 mm

Fall Time: 90 ns

Rise Time: 90 ns

Technology: SiC

Unit Weight: 50 g

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 1.36 kW

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 80 ns

Typical Turn-Off Delay Time: 300 ns

Id - Continuous Drain Current: 204 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.7 V