ROHM Semiconductor BSM180D12P2E002 SiC 功率模块 注意，单一客户，考虑不可取消不可退货

Width: 62 mm

Height: 15.4 mm

Length: 152 mm

Fall Time: 45 ns

Rise Time: 45 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 1.36 kW

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 125 ns

Id - Continuous Drain Current: 204 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V