ROHM Semiconductor BSM250D17P2E004 SiC功率模块1700V Vdss；250A Id SiC功率模块

Width: 62 mm

Height: 15.4 mm

Length: 152 mm

Fall Time: 70 ns

Rise Time: 55 ns

Technology: SiC

Unit Weight: 431 g

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 1.8 kW

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 55 ns

Typical Turn-Off Delay Time: 195 ns

Id - Continuous Drain Current: 250 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4 V