ROHM Semiconductor BSM450D12P4G102 SiC功率模块 BSM450D12P4G102 是由SiC-UMOSFET组成的半桥模块

Width: 62 mm

Length: 152 mm

Fall Time: 90 ns

Rise Time: 80 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.45 kW

Vgs - Gate-Source Voltage: - 4 V, + 21 V

Typical Turn-On Delay Time: 100 ns

Typical Turn-Off Delay Time: 430 ns

Id - Continuous Drain Current: 447 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.8 V