ROHM Semiconductor EMD30T2R 数字晶体管 TRANS DIGI BJT NPN PNP 100200MA 6针

Width: 1.2 mm

Height: 0.5 mm

Length: 1.6 mm

Configuration: Dual

Mounting Style: SMD/SMT

Output Voltage: - 70 mV, 100 mV

Number of Channels: 2 Channel

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

Typical Input Resistor: 10 kOhms, 1 kOhms

Typical Resistor Ratio: 1, 10

DC Current Gain hFE Max: 30

Emitter- Base Voltage VEBO: - 2.5 V, 3 V

Maximum Operating Frequency: 250 MHz

Continuous Collector Current: 100 mA, - 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30 at 5 mA, 5 V, 30 at - 100 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 300 mV, - 300 mV