ROHM Semiconductor EMY1T2R 双极晶体管 BJTs - Bipolar Transistors 推荐替代 755-VT6Z2T2R

Width: 1.2 mm

Height: 0.5 mm

Length: 1.6 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 560 at 1 mA, 6 V

Gain Bandwidth Product fT: 140 MHz, 180 MHz

Emitter- Base Voltage VEBO: 6 V, 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 1 mA, 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 400 mV, 500 mV