ROHM Semiconductor EMZ7T2R 双极型晶体管 NPN/PNP 12V 500MA

Width: 1.2 mm

Height: 0.5 mm

Length: 1.6 mm

Technology: Si

Unit Weight: 77.507 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 680 at 10 mA, 2 V

Gain Bandwidth Product fT: 320 MHz, 260 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 10 mA, 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 90 mV, 100 mV