ROHM Semiconductor FMW4T148 双极晶体管 TRANS GP BJT NPN 120V 0.05A 5针

Technology: Si

Unit Weight: 6.300 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 820

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 500 mV