ROHM Semiconductor GNP1070TC-ZE2 功率晶体管 DFN8X8 650V 20A 氮化镓

Fall Time: 8.7 ns

Rise Time: 6.9 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 5.2 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 56 W

Vgs - Gate-Source Voltage: - 10 V, + 6 V

Typical Turn-On Delay Time: 5.9 ns

Typical Turn-Off Delay Time: 8 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 98 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.45 V