ROHM Semiconductor HS8K11TB 晶体管 MOSFET 阵列 双路 N-沟道 30V 7A/11A 10引脚 HSML3030 压纹带卷

No. of Pins: 10

Channel Type: Dual N Channel

Transistor Case Style: HSML3030L10

Operating Temperature Max: 150 °C

Power Dissipation N Channel: 2

Drain Source Voltage Vds N Channel: 30

Continuous Drain Current Id N Channel: 7|11

Drain Source On State Resistance N Channel: 17.9

Datasheet