ROHM Semiconductor HT8KE6HTB1 MOSFETs HSMT8 100V 12.5A N 通道

Fall Time: 6.4 ns

Rise Time: 6.3 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 6.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 14 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.1 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 12.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.3 S

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V