ROHM Semiconductor IMD3AT108 数字晶体管 双数字PNP/NPN

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Unit Weight: 35 mg

Configuration: Dual

Mounting Style: SMD/SMT

Output Voltage: 100 mV, - 100 mV

Number of Channels: 2 Channel

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 300 mW

Typical Input Resistor: 10 kOhms

Typical Resistor Ratio: 1

DC Current Gain hFE Max: 30

Emitter- Base Voltage VEBO: 3 V, - 3 V

Maximum Operating Frequency: 250 MHz

Continuous Collector Current: 100 mA, - 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30 at 5 mA, 5 V, 30 at - 5 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 300 mV, - 300 mV