ROHM Semiconductor IMH23T110 数字晶体管 双NPN 20V 600mA

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

Typical Input Resistor: 4.7 kOhms

DC Current Gain hFE Max: 820

Emitter- Base Voltage VEBO: 12 V

Maximum Operating Frequency: 150 MHz

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 820 at 50 mA, 5 V

Collector- Emitter Voltage VCEO Max: 20 V