ROHM Semiconductor QSX1TR 双极型晶体管 BIPOLAR NPN Vce 12V 6A

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 680 at 500 mA, 2 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: 6 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 200 mV