ROHM Semiconductor R6020ENZ1C9 N沟道功率MOSFET 600V ±20A 3引脚 TO-247管式

No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 120

Transistor Mounting: Through Hole

Transistor Case Style: TO-247AD

Drain Source Voltage Vds: 600

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 20

Drain Source On State Resistance: 196

Gate Source Threshold Voltage Max: 4

Datasheet