ROHM Semiconductor R6038YNZ4C13 MOSFETs 600V 38A TO-247，高速开关功率MOSFET

Fall Time: 15 ns

Rise Time: 28 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 50 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 85 ns

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 96 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 6 V