ROHM Semiconductor R6576KNZ1C9 N沟道功率MOSFET 650V ±76A 3引脚 TO-247管式

No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 735

Transistor Mounting: Through Hole

Transistor Case Style: TO-247AD

Drain Source Voltage Vds: 650

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 76

Drain Source On State Resistance: 46

Gate Source Threshold Voltage Max: 5

Datasheet