ROHM Semiconductor RB088T100NZC9 肖特基二极管 DIODE-SCHOTTKY BARRIER

Technology: Si

Configuration: Dual Anode Common Cathode

Mounting Style: Through Hole

If - Forward Current: 10 A

Ir - Reverse Current: 5 uA

Vf - Forward Voltage: 870 mV

Vr - Reverse Voltage: 100 V

Ifsm - Forward Surge Current: 100 A

Maximum Operating Temperature: + 150 C

Vrrm - Repetitive Reverse Voltage: 110 V