ROHM Semiconductor RCD100N20TL N沟道功率MOSFET 200V 10A 3引脚(2+散热片) CPT T/R

No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 85

Transistor Mounting: Surface mount

Transistor Case Style: SOT-428

Drain Source Voltage Vds: 200

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 10

Drain Source On State Resistance: 182

Gate Source Threshold Voltage Max: 5.25

Datasheet