ROHM Semiconductor RD3L04BBKHRBTL N沟MOSFET 60V 40A，TO-252（DPAK），汽车用功率MOSFET

Fall Time: 6.3 ns

Rise Time: 9 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 53 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 25 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 13.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V