ROHM Semiconductor RD3P01BATTL1 MOSFETs RD3P01BAT 是一种低导通电阻功率MOSFET，适用于开关应用。

Fall Time: 45 ns

Rise Time: 14 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 19.4 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 59 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.4 S

Rds On - Drain-Source Resistance: 240 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V