ROHM Semiconductor RGPR30NS40HRTL IGBT晶体管 400V 30A 1.6V Vce 点火IGBT

Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Pd - Power Dissipation: 125 W

Gate-Emitter Leakage Current: 1.2 mA

Maximum Gate Emitter Voltage: 10 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 430 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 30 A