ROHM Semiconductor RGS30TSX2DHRC11 IGBT晶体管 TO247 1200V 15A TRNCH

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 267 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 30 A