ROHM Semiconductor RGT80TS65DGC13 IGBT晶体管 TO247 650V 40A TRNCH

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 234 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 70 A