ROHM Semiconductor RGT8BM65DTL IGBT晶体管 650V 4A IGBT停止沟槽

Technology: Si

Unit Weight: 4 g

REACH - SVHC: Details

Mounting Style: SMD/SMT

Pd - Power Dissipation: 62 W

Operating Temperature Range: - 40 C to + 175 C

Continuous Collector Current: 4 A

Gate-Emitter Leakage Current: +/- 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 8 A

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 8 A