ROHM Semiconductor RGTH60TS65GC11 IGBT晶体管 650V 30A IGBT停止沟槽

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 194 W

Operating Temperature Range: - 40 C to + 175 C

Continuous Collector Current: 30 A

Gate-Emitter Leakage Current: +/- 200 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 58 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 58 A