ROHM Semiconductor RGTH80TK65D-E 晶体管 IGBT 芯片 N-CH 650V 31A 3针 TO-3PFM 管

No. of Pins: 3

Power Dissipation: 66

Transistor Mounting: Through Hole

Transistor Case Style: TO-3PFM

Operating Temperature Max: 175 °C

Continuous Collector Current: 31

Collector Emitter Voltage Max: 650

Collector Emitter Saturation Voltage: 1.6

Datasheet