ROHM Semiconductor RGW60TK65GVC11 IGBT晶体管 650V 30A TO-3PFM 场效应沟槽型IGBT

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 72 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 33 A