ROHM Semiconductor RGW60TS65DGC11 IGBT晶体管 650V 30A TO-247N 场效沟槽型IGBT

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 178 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 60 A

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 60 A