ROHM Semiconductor RJ1P07CBHTL1 MOSFETs TO263 100V 120A N沟MOSFET

Fall Time: 60 ns

Rise Time: 37 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 73 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 135 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 99 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 32 S

Rds On - Drain-Source Resistance: 5.1 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V