ROHM Semiconductor RJ1P10BBHTL1 MOSFETs TO263 100V 170A N沟MOSFET

Fall Time: 93 ns

Rise Time: 54 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 135 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 189 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 59 ns

Typical Turn-Off Delay Time: 170 ns

Id - Continuous Drain Current: 105 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 48 S

Rds On - Drain-Source Resistance: 3 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 4 V