ROHM Semiconductor RJU002N06FRAT106 N沟MOSFET 60V Vds 0.2A 2.2Rds(on)

Fall Time: 90 ns

Rise Time: 7 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 500 mV