ROHM Semiconductor RQ3E150MNTB1 MOSFETs 4.5V 驱动 N沟MOSFET

Fall Time: 40 ns

Rise Time: 13 ns

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 15 A

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V