ROHM Semiconductor RQ5E065AJTCL MOSFETs RQ5E065AJ 是一种用于开关应用的小信号MOSFET，具有低导通电阻。

Fall Time: 19 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 12 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 12.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 52 ns

Id - Continuous Drain Current: 6.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7.5 S

Rds On - Drain-Source Resistance: 18.1 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V