ROHM Semiconductor RQ5E070BNTCL N沟MOSFET 30V 7A 硅MOSFET

Fall Time: 23 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 12 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.5 ns

Typical Turn-Off Delay Time: 28 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.5 S

Rds On - Drain-Source Resistance: 16.1 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V