ROHM Semiconductor RQ6E060ATTCR MOSFETs RQ6E060AT 是用于开关和负载开关的低导通电阻MOSFET。

Fall Time: 30 ns

Rise Time: 15 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 25.9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.7 S

Rds On - Drain-Source Resistance: 26.4 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V